Project objectives
The MORE project focuses on oxides based ReRAM, where the resistive non volatile memory element is a Metal/transition metal binary Oxides/Metal (MOM) heterostructure, with the oxide sandwiched between two metal electrodes.
The objectives of the MORE project are:
- The synthesis of thin films- and nanowire-based MOM heterostructures, as well as MOM nanowire arrays embedded in a alumina matrix, with resistive switching functionalities, and using advanced materials, using cost-effective deposition techniques and a combination of top-down/bottom-down approaches
- The investigation of the resistive switching properties of MOM heterostructures as building blocks for electronics and nano-electronic applications.
The proposed objectives are pursued through a multidisciplinary approach and combining the complementary expertise of two Italian research groups active in advanced materials and concepts for future nanoelectronic (memory) devices, as well as in metallic/oxide nanowires synthesis by electrochemical methods using porous anodic aluminium oxide (AAO) membrane templates. The characterization of the electric properties of the synthesized heterostructures, including the fabrication of nanodevices and the development of high-spatial resolution techniques are also addressed.
The planned outcomes of the proposed project are:
- Synthesis of various advanced materials and heterostructures as thin films, nanowires and arrays of nanowires, using mainly two promising techniques such as atomic layer deposition and electrochemical synthesis. Both techniques are suitable for microelectronic industry, as cost-effective technologies and with the possibility to deposit materials with controlled properties also in high aspect ratio structures.
- Structural, chemical and electrical characterization of the heterostructures down to the nanoscale, optimization of the deposited materials based on the results of the performed investigations.
- Fabrication of test devices with nanometer electrodes using electron beam lithography approach, and fabrication of arrays of 1D heterostructures accomplished through template assisted synthesis.
- Development of advanced characterization methods based on scanning probe microscopy, with high spatial resolution, to address the local electrical properties of thin film or to characterize the single nanowire.
- Identification of the switching properties of thin films and nanowire heterostructures, based on binary transition metal oxides and metals; study of the role of electrodes, interfaces and physical properties of the materials on the switching mechanisms. Evolution of switching properties as a function of the scaling (from 100 nm down to 20nm) of 1D heterostructures.
Workplan
The activity of the project is divided in three work packages addressing specific issues:
WP1. Fabrication and characterization of thin film MOM heterostructures
WP2. Fabrication and characterization of 1D MOM heterostructures
WP3. Investigation of the resistive switching properties down to nanoscale
